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數字萬用表|SDT-21B|

數字萬用表|SDT-21B|

是(shi)萬用(yong)表(biao)的基本(ben)功能之一，吃透(tou)電(dian)(dian)阻(zu)測(ce)(ce)量(liang)(liang)(liang)的原理可(ke)開拓(tuo)萬用(yong)表(biao)測(ce)(ce)量(liang)(liang)(liang)元件的巨大潛力。電(dian)(dian)阻(zu)測(ce)(ce)量(liang)(liang)(liang)通常分(fen)為(wei)低(di)阻(zu)測(ce)(ce)量(liang)(liang)(liang)和高(gao)阻(zu)測(ce)(ce)量(liang)(liang)(liang)。低(di)阻(zu)測(ce)(ce)量(liang)(liang)(liang)分(fen)4個量(liang)(liang)(liang)程：Rx1、Rx10、Rx100、RxK，測(ce)(ce)量(liang)(liang)(liang)范圍(wei)從(cong)(cong)0~500kΩ以(yi)上。高(gao)阻(zu)測(ce)(ce)量(liang)(liang)(liang)為(wei)RX10K。測(ce)(ce)量(liang)(liang)(liang)范圍(wei)從(cong)(cong)10kΩ~5MΩ以(yi)上。低(di)阻(zu)測(ce)(ce)量(liang)(liang)(liang)時，內電(dian)(dian)池(chi)電(dian)(dian)壓多(duo)數為(wei)15V(如(ru)MF-500MF47等)也(ye)有3V的(如(ru)DE-960TR)。高(gao)阻(zu)測(ce)(ce)量(liang)(liang)(liang)時內電(dian)(dian)池(chi)電(dian)(dian)壓多(duo)數為(wei)9V也(ye)有個別15V的。

所有(you)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)量(liang)(liang)程(cheng)都(dou)共同(tong)使(shi)用(yong)(yong)(yong)一條刻(ke)度(du)幾乎(hu)所有(you)指針式萬用(yong)(yong)(yong)表(biao)都(dou)將(jiang)這條刻(ke)度(du)放在表(biao)盤的(de)(de)(de)(de)最上(shang)面。指針處在中央位置時，這個(ge)數值(zhi)(zhi)就(jiu)叫中心(xin)阻(zu)(zu)(zu)值(zhi)(zhi)。如MF-500的(de)(de)(de)(de)中心(xin)值(zhi)(zhi)為(wei)10，DE-960TR中心(xin)值(zhi)(zhi)為(wei)20等。掌握這個(ge)數值(zhi)(zhi)和(he)各(ge)(ge)擋(dang)(dang)使(shi)用(yong)(yong)(yong)的(de)(de)(de)(de)內電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓時，就(jiu)能計(ji)算出電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)各(ge)(ge)擋(dang)(dang)對應的(de)(de)(de)(de)測(ce)(ce)(ce)試電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)。低阻(zu)(zu)(zu)測(ce)(ce)(ce)量(liang)(liang)的(de)(de)(de)(de)4個(ge)量(liang)(liang)程(cheng)，每(mei)個(ge)量(liang)(liang)程(cheng)使(shi)用(yong)(yong)(yong)的(de)(de)(de)(de)測(ce)(ce)(ce)量(liang)(liang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)都(dou)不同(tong)。與高一擋(dang)(dang)位相比(bi)，是(shi)10倍的(de)(de)(de)(de)關系。以MF-500型(xing)萬用(yong)(yong)(yong)表(biao)為(wei)例(li)因(yin)其低阻(zu)(zu)(zu)測(ce)(ce)(ce)量(liang)(liang)的(de)(de)(de)(de)4個(ge)量(liang)(liang)程(cheng)內電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓為(wei)15V電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)(zu)刻(ke)度(du)的(de)(de)(de)(de)中心(xin)值(zhi)(zhi)為(wei)10。可求得Rx1擋(dang)(dang)的(de)(de)(de)(de)滿度(du)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)為(wei)150mA；RX10擋(dang)(dang)的(de)(de)(de)(de)滿度(du)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)為(wei)15mA；Rx100擋(dang)(dang)的(de)(de)(de)(de)滿度(du)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)為(wei)1.5mA；RxK擋(dang)(dang)的(de)(de)(de)(de)滿度(du)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)為(wei)150uA；Rx10K檔，內電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓為(wei)9+1.5=10.5V，此時滿度(du)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)為(wei)105uA。明白各(ge)(ge)擋(dang)(dang)使(shi)用(yong)(yong)(yong)的(de)(de)(de)(de)內電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓以及(ji)各(ge)(ge)擋(dang)(dang)對應的(de)(de)(de)(de)滿度(du)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)對測(ce)(ce)(ce)量(liang)(liang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子元件(jian)非常重要。

如測(ce)(ce)量(liang)(liang)(liang)(liang)(liang)電(dian)(dian)(dian)容(rong)(rong)(rong)器的(de)(de)(de)充放電(dian)(dian)(dian)特(te)性時，對大(da)(da)(da)容(rong)(rong)(rong)量(liang)(liang)(liang)(liang)(liang)的(de)(de)(de)電(dian)(dian)(dian)容(rong)(rong)(rong)要(yao)(yao)使(shi)(shi)用(yong)(yong)低阻量(liang)(liang)(liang)(liang)(liang)程(cheng)；對小電(dian)(dian)(dian)容(rong)(rong)(rong)要(yao)(yao)使(shi)(shi)用(yong)(yong)Rx10K量(liang)(liang)(liang)(liang)(liang)程(cheng)。測(ce)(ce)量(liang)(liang)(liang)(liang)(liang)可控硅的(de)(de)(de)維(wei)持電(dian)(dian)(dian)流時要(yao)(yao)使(shi)(shi)用(yong)(yong)低量(liang)(liang)(liang)(liang)(liang)程(cheng)，為其提(ti)供(gong)最(zui)大(da)(da)(da)的(de)(de)(de)測(ce)(ce)試(shi)(shi)電(dian)(dian)(dian)流。測(ce)(ce)試(shi)(shi)絕緣柵型的(de)(de)(de)場(chang)效應(ying)管(guan)GBT管(guan)或(huo)高壓(ya)硅堆時，要(yao)(yao)使(shi)(shi)用(yong)(yong)Rx10K量(liang)(liang)(liang)(liang)(liang)程(cheng)，才(cai)能(neng)(neng)為其柵極提(ti)供(gong)5V以上(shang)的(de)(de)(de)門坎電(dian)(dian)(dian)壓(ya)。測(ce)(ce)量(liang)(liang)(liang)(liang)(liang)發光二(er)極管(guan)或(huo)光電(dian)(dian)(dian)耦合器的(de)(de)(de)二(er)極管(guan)時，如果使(shi)(shi)用(yong)(yong)內電(dian)(dian)(dian)池(chi)為1.5V的(de)(de)(de)萬用(yong)(yong)表(biao)可能(neng)(neng)正向不(bu)通。即使(shi)(shi)使(shi)(shi)用(yong)(yong)Rx10K量(liang)(liang)(liang)(liang)(liang)程(cheng)也因提(ti)供(gong)的(de)(de)(de)測(ce)(ce)試(shi)(shi)電(dian)(dian)(dian)流太小而不(bu)能(neng)(neng)發光。較(jiao)合適的(de)(de)(de)方(fang)法(fa)是使(shi)(shi)用(yong)(yong)內電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓(ya)為3V的(de)(de)(de)萬用(yong)(yong)表(biao)進行(xing)直觀的(de)(de)(de)測(ce)(ce)試(shi)(shi)。在線測(ce)(ce)試(shi)(shi)晶體管(guan)的(de)(de)(de)PN結時如果使(shi)(shi)用(yong)(yong)RxK量(liang)(liang)(liang)(liang)(liang)程(cheng)正/反向特(te)性不(bu)明顯容(rong)(rong)(rong)易誤判(pan)。使(shi)(shi)用(yong)(yong)Rx10量(liang)(liang)(liang)(liang)(liang)程(cheng)將大(da)(da)(da)大(da)(da)(da)改(gai)善。總之(zhi)電(dian)(dian)(dian)阻量(liang)(liang)(liang)(liang)(liang)程(cheng)的(de)(de)(de)潛力巨大(da)(da)(da)已(yi)經有(you)人開拓出(chu)hFE測(ce)(ce)量(liang)(liang)(liang)(liang)(liang)、電(dian)(dian)(dian)容(rong)(rong)(rong)量(liang)(liang)(liang)(liang)(liang)測(ce)(ce)量(liang)(liang)(liang)(liang)(liang)、同名端(duan)測(ce)(ce)量(liang)(liang)(liang)(liang)(liang)、各種IC的(de)(de)(de)測(ce)(ce)量(liang)(liang)(liang)(liang)(liang)等功能(neng)(neng)。利用(yong)(yong)上(shang)述經驗(yan)提(ti)高檢測(ce)(ce)能(neng)(neng)力，才(cai)能(neng)(neng)在浩如煙海的(de)(de)(de)機器里，查出(chu)損(sun)壞的(de)(de)(de)元件。