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數字萬用表|SDT-21C|

數字萬用表|SDT-21C|

是萬用(yong)表(biao)(biao)的(de)基本功能之一，吃(chi)透電(dian)(dian)(dian)阻(zu)(zu)測(ce)(ce)量(liang)(liang)的(de)原理可開拓(tuo)萬用(yong)表(biao)(biao)測(ce)(ce)量(liang)(liang)元件的(de)巨(ju)大潛(qian)力。電(dian)(dian)(dian)阻(zu)(zu)測(ce)(ce)量(liang)(liang)通常(chang)分為(wei)低阻(zu)(zu)測(ce)(ce)量(liang)(liang)和(he)高阻(zu)(zu)測(ce)(ce)量(liang)(liang)。低阻(zu)(zu)測(ce)(ce)量(liang)(liang)分4個(ge)量(liang)(liang)程：Rx1、Rx10、Rx100、RxK，測(ce)(ce)量(liang)(liang)范圍從(cong)0~500kΩ以上(shang)。高阻(zu)(zu)測(ce)(ce)量(liang)(liang)為(wei)RX10K。測(ce)(ce)量(liang)(liang)范圍從(cong)10kΩ~5MΩ以上(shang)。低阻(zu)(zu)測(ce)(ce)量(liang)(liang)時(shi)，內電(dian)(dian)(dian)池電(dian)(dian)(dian)壓多數為(wei)15V(如MF-500MF47等)也有3V的(de)(如DE-960TR)。高阻(zu)(zu)測(ce)(ce)量(liang)(liang)時(shi)內電(dian)(dian)(dian)池電(dian)(dian)(dian)壓多數為(wei)9V也有個(ge)別15V的(de)。

所有電(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)量(liang)(liang)(liang)程都共同(tong)使用(yong)(yong)一條刻(ke)(ke)度(du)(du)(du)(du)幾乎所有指針式萬用(yong)(yong)表(biao)都將這(zhe)條刻(ke)(ke)度(du)(du)(du)(du)放在(zai)表(biao)盤的(de)(de)(de)(de)最上面。指針處(chu)在(zai)中央位置時，這(zhe)個數值就叫中心阻(zu)值。如MF-500的(de)(de)(de)(de)中心值為(wei)10，DE-960TR中心值為(wei)20等。掌握這(zhe)個數值和各擋使用(yong)(yong)的(de)(de)(de)(de)內(nei)電(dian)(dian)(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)時，就能計算(suan)出電(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)各擋對應的(de)(de)(de)(de)測(ce)(ce)試(shi)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)。低阻(zu)測(ce)(ce)量(liang)(liang)(liang)的(de)(de)(de)(de)4個量(liang)(liang)(liang)程，每個量(liang)(liang)(liang)程使用(yong)(yong)的(de)(de)(de)(de)測(ce)(ce)量(liang)(liang)(liang)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)都不同(tong)。與(yu)高(gao)一擋位相比，是10倍的(de)(de)(de)(de)關系。以(yi)MF-500型萬用(yong)(yong)表(biao)為(wei)例因其(qi)低阻(zu)測(ce)(ce)量(liang)(liang)(liang)的(de)(de)(de)(de)4個量(liang)(liang)(liang)程內(nei)電(dian)(dian)(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)為(wei)15V電(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)刻(ke)(ke)度(du)(du)(du)(du)的(de)(de)(de)(de)中心值為(wei)10。可求(qiu)得Rx1擋的(de)(de)(de)(de)滿度(du)(du)(du)(du)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)為(wei)150mA；RX10擋的(de)(de)(de)(de)滿度(du)(du)(du)(du)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)為(wei)15mA；Rx100擋的(de)(de)(de)(de)滿度(du)(du)(du)(du)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)為(wei)1.5mA；RxK擋的(de)(de)(de)(de)滿度(du)(du)(du)(du)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)為(wei)150uA；Rx10K檔(dang)，內(nei)電(dian)(dian)(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)為(wei)9+1.5=10.5V，此時滿度(du)(du)(du)(du)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)為(wei)105uA。明白各擋使用(yong)(yong)的(de)(de)(de)(de)內(nei)電(dian)(dian)(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)以(yi)及各擋對應的(de)(de)(de)(de)滿度(du)(du)(du)(du)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)對測(ce)(ce)量(liang)(liang)(liang)電(dian)(dian)(dian)(dian)(dian)(dian)子元件非常重(zhong)要。

如測(ce)(ce)(ce)量(liang)(liang)(liang)電(dian)容器的(de)(de)(de)(de)(de)(de)充放(fang)電(dian)特(te)性(xing)時(shi)，對大容量(liang)(liang)(liang)的(de)(de)(de)(de)(de)(de)電(dian)容要使(shi)(shi)用(yong)(yong)(yong)低阻(zu)量(liang)(liang)(liang)程(cheng)；對小電(dian)容要使(shi)(shi)用(yong)(yong)(yong)Rx10K量(liang)(liang)(liang)程(cheng)。測(ce)(ce)(ce)量(liang)(liang)(liang)可控硅的(de)(de)(de)(de)(de)(de)維持電(dian)流時(shi)要使(shi)(shi)用(yong)(yong)(yong)低量(liang)(liang)(liang)程(cheng)，為其(qi)提供(gong)最大的(de)(de)(de)(de)(de)(de)測(ce)(ce)(ce)試(shi)(shi)電(dian)流。測(ce)(ce)(ce)試(shi)(shi)絕緣柵(zha)型(xing)的(de)(de)(de)(de)(de)(de)場效應(ying)管(guan)GBT管(guan)或(huo)高壓硅堆(dui)時(shi)，要使(shi)(shi)用(yong)(yong)(yong)Rx10K量(liang)(liang)(liang)程(cheng)，才能(neng)(neng)為其(qi)柵(zha)極(ji)提供(gong)5V以(yi)上的(de)(de)(de)(de)(de)(de)門坎電(dian)壓。測(ce)(ce)(ce)量(liang)(liang)(liang)發光(guang)(guang)二極(ji)管(guan)或(huo)光(guang)(guang)電(dian)耦合(he)器的(de)(de)(de)(de)(de)(de)二極(ji)管(guan)時(shi)，如果使(shi)(shi)用(yong)(yong)(yong)內電(dian)池為1.5V的(de)(de)(de)(de)(de)(de)萬(wan)用(yong)(yong)(yong)表(biao)可能(neng)(neng)正向不通。即(ji)使(shi)(shi)使(shi)(shi)用(yong)(yong)(yong)Rx10K量(liang)(liang)(liang)程(cheng)也因提供(gong)的(de)(de)(de)(de)(de)(de)測(ce)(ce)(ce)試(shi)(shi)電(dian)流太小而不能(neng)(neng)發光(guang)(guang)。較合(he)適的(de)(de)(de)(de)(de)(de)方法(fa)是使(shi)(shi)用(yong)(yong)(yong)內電(dian)池電(dian)壓為3V的(de)(de)(de)(de)(de)(de)萬(wan)用(yong)(yong)(yong)表(biao)進行直觀的(de)(de)(de)(de)(de)(de)測(ce)(ce)(ce)試(shi)(shi)。在線測(ce)(ce)(ce)試(shi)(shi)晶體管(guan)的(de)(de)(de)(de)(de)(de)PN結時(shi)如果使(shi)(shi)用(yong)(yong)(yong)RxK量(liang)(liang)(liang)程(cheng)正/反向特(te)性(xing)不明顯容易誤(wu)判。使(shi)(shi)用(yong)(yong)(yong)Rx10量(liang)(liang)(liang)程(cheng)將(jiang)大大改善。總之電(dian)阻(zu)量(liang)(liang)(liang)程(cheng)的(de)(de)(de)(de)(de)(de)潛力(li)巨大已經(jing)有人開(kai)拓出hFE測(ce)(ce)(ce)量(liang)(liang)(liang)、電(dian)容量(liang)(liang)(liang)測(ce)(ce)(ce)量(liang)(liang)(liang)、同名(ming)端測(ce)(ce)(ce)量(liang)(liang)(liang)、各種IC的(de)(de)(de)(de)(de)(de)測(ce)(ce)(ce)量(liang)(liang)(liang)等(deng)功能(neng)(neng)。利用(yong)(yong)(yong)上述經(jing)驗提高檢測(ce)(ce)(ce)能(neng)(neng)力(li)，才能(neng)(neng)在浩如煙海的(de)(de)(de)(de)(de)(de)機(ji)器里，查(cha)出損壞的(de)(de)(de)(de)(de)(de)元件(jian)。