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數字萬用表|SDT-11|

數字萬用表|SDT-11|

是萬用(yong)(yong)表的基本功能之一，吃透電阻(zu)(zu)(zu)測(ce)(ce)量(liang)(liang)的原理可開拓萬用(yong)(yong)表測(ce)(ce)量(liang)(liang)元件的巨大(da)潛力。電阻(zu)(zu)(zu)測(ce)(ce)量(liang)(liang)通常分為(wei)(wei)低阻(zu)(zu)(zu)測(ce)(ce)量(liang)(liang)和高阻(zu)(zu)(zu)測(ce)(ce)量(liang)(liang)。低阻(zu)(zu)(zu)測(ce)(ce)量(liang)(liang)分4個(ge)量(liang)(liang)程：Rx1、Rx10、Rx100、RxK，測(ce)(ce)量(liang)(liang)范(fan)圍(wei)從0~500kΩ以上。高阻(zu)(zu)(zu)測(ce)(ce)量(liang)(liang)為(wei)(wei)RX10K。測(ce)(ce)量(liang)(liang)范(fan)圍(wei)從10kΩ~5MΩ以上。低阻(zu)(zu)(zu)測(ce)(ce)量(liang)(liang)時，內電池(chi)電壓(ya)多數為(wei)(wei)15V(如(ru)MF-500MF47等)也有3V的(如(ru)DE-960TR)。高阻(zu)(zu)(zu)測(ce)(ce)量(liang)(liang)時內電池(chi)電壓(ya)多數為(wei)(wei)9V也有個(ge)別15V的。

所有電(dian)(dian)(dian)(dian)阻(zu)(zu)量(liang)(liang)(liang)(liang)程都(dou)共同使(shi)用(yong)一條刻(ke)度(du)(du)(du)幾乎所有指針(zhen)(zhen)式(shi)萬用(yong)表(biao)(biao)都(dou)將這條刻(ke)度(du)(du)(du)放在(zai)表(biao)(biao)盤(pan)的(de)(de)(de)最(zui)上面。指針(zhen)(zhen)處(chu)在(zai)中(zhong)央位置(zhi)時(shi)，這個(ge)數值就叫中(zhong)心阻(zu)(zu)值。如MF-500的(de)(de)(de)中(zhong)心值為(wei)10，DE-960TR中(zhong)心值為(wei)20等(deng)。掌(zhang)握這個(ge)數值和各擋(dang)(dang)(dang)(dang)使(shi)用(yong)的(de)(de)(de)內(nei)電(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)壓時(shi)，就能(neng)計算出電(dian)(dian)(dian)(dian)阻(zu)(zu)各擋(dang)(dang)(dang)(dang)對(dui)應(ying)的(de)(de)(de)測(ce)(ce)(ce)(ce)(ce)試電(dian)(dian)(dian)(dian)流(liu)(liu)。低阻(zu)(zu)測(ce)(ce)(ce)(ce)(ce)量(liang)(liang)(liang)(liang)的(de)(de)(de)4個(ge)量(liang)(liang)(liang)(liang)程，每個(ge)量(liang)(liang)(liang)(liang)程使(shi)用(yong)的(de)(de)(de)測(ce)(ce)(ce)(ce)(ce)量(liang)(liang)(liang)(liang)電(dian)(dian)(dian)(dian)流(liu)(liu)都(dou)不同。與高一擋(dang)(dang)(dang)(dang)位相比，是10倍的(de)(de)(de)關系。以MF-500型萬用(yong)表(biao)(biao)為(wei)例(li)因其低阻(zu)(zu)測(ce)(ce)(ce)(ce)(ce)量(liang)(liang)(liang)(liang)的(de)(de)(de)4個(ge)量(liang)(liang)(liang)(liang)程內(nei)電(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)壓為(wei)15V電(dian)(dian)(dian)(dian)阻(zu)(zu)刻(ke)度(du)(du)(du)的(de)(de)(de)中(zhong)心值為(wei)10。可求得Rx1擋(dang)(dang)(dang)(dang)的(de)(de)(de)滿(man)度(du)(du)(du)電(dian)(dian)(dian)(dian)流(liu)(liu)為(wei)150mA；RX10擋(dang)(dang)(dang)(dang)的(de)(de)(de)滿(man)度(du)(du)(du)電(dian)(dian)(dian)(dian)流(liu)(liu)為(wei)15mA；Rx100擋(dang)(dang)(dang)(dang)的(de)(de)(de)滿(man)度(du)(du)(du)電(dian)(dian)(dian)(dian)流(liu)(liu)為(wei)1.5mA；RxK擋(dang)(dang)(dang)(dang)的(de)(de)(de)滿(man)度(du)(du)(du)電(dian)(dian)(dian)(dian)流(liu)(liu)為(wei)150uA；Rx10K檔，內(nei)電(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)壓為(wei)9+1.5=10.5V，此時(shi)滿(man)度(du)(du)(du)電(dian)(dian)(dian)(dian)流(liu)(liu)為(wei)105uA。明白各擋(dang)(dang)(dang)(dang)使(shi)用(yong)的(de)(de)(de)內(nei)電(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)壓以及各擋(dang)(dang)(dang)(dang)對(dui)應(ying)的(de)(de)(de)滿(man)度(du)(du)(du)電(dian)(dian)(dian)(dian)流(liu)(liu)對(dui)測(ce)(ce)(ce)(ce)(ce)量(liang)(liang)(liang)(liang)電(dian)(dian)(dian)(dian)子元件非常重(zhong)要。

如測(ce)(ce)(ce)量(liang)(liang)(liang)(liang)(liang)電(dian)(dian)容器的(de)(de)(de)充放(fang)電(dian)(dian)特性時(shi)(shi)(shi)，對(dui)大(da)容量(liang)(liang)(liang)(liang)(liang)的(de)(de)(de)電(dian)(dian)容要(yao)使(shi)(shi)用(yong)低(di)(di)阻量(liang)(liang)(liang)(liang)(liang)程(cheng)(cheng)(cheng)；對(dui)小(xiao)電(dian)(dian)容要(yao)使(shi)(shi)用(yong)Rx10K量(liang)(liang)(liang)(liang)(liang)程(cheng)(cheng)(cheng)。測(ce)(ce)(ce)量(liang)(liang)(liang)(liang)(liang)可控(kong)硅的(de)(de)(de)維(wei)持電(dian)(dian)流時(shi)(shi)(shi)要(yao)使(shi)(shi)用(yong)低(di)(di)量(liang)(liang)(liang)(liang)(liang)程(cheng)(cheng)(cheng)，為其(qi)提供(gong)最大(da)的(de)(de)(de)測(ce)(ce)(ce)試(shi)(shi)(shi)電(dian)(dian)流。測(ce)(ce)(ce)試(shi)(shi)(shi)絕緣柵(zha)型的(de)(de)(de)場效應管(guan)GBT管(guan)或高壓硅堆時(shi)(shi)(shi)，要(yao)使(shi)(shi)用(yong)Rx10K量(liang)(liang)(liang)(liang)(liang)程(cheng)(cheng)(cheng)，才(cai)能(neng)(neng)為其(qi)柵(zha)極提供(gong)5V以上的(de)(de)(de)門坎電(dian)(dian)壓。測(ce)(ce)(ce)量(liang)(liang)(liang)(liang)(liang)發(fa)光二極管(guan)或光電(dian)(dian)耦(ou)合器的(de)(de)(de)二極管(guan)時(shi)(shi)(shi)，如果(guo)使(shi)(shi)用(yong)內(nei)電(dian)(dian)池為1.5V的(de)(de)(de)萬用(yong)表(biao)可能(neng)(neng)正向不(bu)通(tong)。即使(shi)(shi)使(shi)(shi)用(yong)Rx10K量(liang)(liang)(liang)(liang)(liang)程(cheng)(cheng)(cheng)也因提供(gong)的(de)(de)(de)測(ce)(ce)(ce)試(shi)(shi)(shi)電(dian)(dian)流太小(xiao)而不(bu)能(neng)(neng)發(fa)光。較合適的(de)(de)(de)方法是使(shi)(shi)用(yong)內(nei)電(dian)(dian)池電(dian)(dian)壓為3V的(de)(de)(de)萬用(yong)表(biao)進行直觀的(de)(de)(de)測(ce)(ce)(ce)試(shi)(shi)(shi)。在線(xian)測(ce)(ce)(ce)試(shi)(shi)(shi)晶體管(guan)的(de)(de)(de)PN結時(shi)(shi)(shi)如果(guo)使(shi)(shi)用(yong)RxK量(liang)(liang)(liang)(liang)(liang)程(cheng)(cheng)(cheng)正/反(fan)向特性不(bu)明顯(xian)容易誤(wu)判。使(shi)(shi)用(yong)Rx10量(liang)(liang)(liang)(liang)(liang)程(cheng)(cheng)(cheng)將大(da)大(da)改善。總之電(dian)(dian)阻量(liang)(liang)(liang)(liang)(liang)程(cheng)(cheng)(cheng)的(de)(de)(de)潛力(li)巨大(da)已經有(you)人開(kai)拓出hFE測(ce)(ce)(ce)量(liang)(liang)(liang)(liang)(liang)、電(dian)(dian)容量(liang)(liang)(liang)(liang)(liang)測(ce)(ce)(ce)量(liang)(liang)(liang)(liang)(liang)、同名(ming)端測(ce)(ce)(ce)量(liang)(liang)(liang)(liang)(liang)、各種IC的(de)(de)(de)測(ce)(ce)(ce)量(liang)(liang)(liang)(liang)(liang)等功能(neng)(neng)。利用(yong)上述經驗(yan)提高檢測(ce)(ce)(ce)能(neng)(neng)力(li)，才(cai)能(neng)(neng)在浩如煙海的(de)(de)(de)機器里，查出損壞(huai)的(de)(de)(de)元件(jian)。