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數字萬用表|DT-830|

數字萬用表|DT-830|

是萬用表的(de)基本功能之一(yi)，吃透電(dian)阻(zu)測(ce)(ce)量(liang)(liang)的(de)原(yuan)理可開拓(tuo)萬用表測(ce)(ce)量(liang)(liang)元件的(de)巨(ju)大潛力。電(dian)阻(zu)測(ce)(ce)量(liang)(liang)通常分為(wei)低(di)(di)阻(zu)測(ce)(ce)量(liang)(liang)和(he)高阻(zu)測(ce)(ce)量(liang)(liang)。低(di)(di)阻(zu)測(ce)(ce)量(liang)(liang)分4個量(liang)(liang)程：Rx1、Rx10、Rx100、RxK，測(ce)(ce)量(liang)(liang)范圍(wei)從(cong)0~500kΩ以(yi)上(shang)。高阻(zu)測(ce)(ce)量(liang)(liang)為(wei)RX10K。測(ce)(ce)量(liang)(liang)范圍(wei)從(cong)10kΩ~5MΩ以(yi)上(shang)。低(di)(di)阻(zu)測(ce)(ce)量(liang)(liang)時，內電(dian)池(chi)電(dian)壓多(duo)數為(wei)15V(如MF-500MF47等)也有3V的(de)(如DE-960TR)。高阻(zu)測(ce)(ce)量(liang)(liang)時內電(dian)池(chi)電(dian)壓多(duo)數為(wei)9V也有個別(bie)15V的(de)。

所有電(dian)(dian)(dian)阻(zu)量(liang)程(cheng)(cheng)都共(gong)同使用(yong)一(yi)條刻(ke)(ke)度(du)(du)幾乎所有指(zhi)(zhi)針(zhen)式萬用(yong)表(biao)(biao)都將這(zhe)條刻(ke)(ke)度(du)(du)放(fang)在(zai)(zai)表(biao)(biao)盤的(de)(de)(de)(de)(de)最上(shang)面。指(zhi)(zhi)針(zhen)處(chu)在(zai)(zai)中央位(wei)置(zhi)時(shi)，這(zhe)個數值就叫(jiao)中心阻(zu)值。如MF-500的(de)(de)(de)(de)(de)中心值為(wei)(wei)10，DE-960TR中心值為(wei)(wei)20等。掌握(wo)這(zhe)個數值和各(ge)(ge)擋(dang)使用(yong)的(de)(de)(de)(de)(de)內(nei)電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓(ya)時(shi)，就能計算出電(dian)(dian)(dian)阻(zu)各(ge)(ge)擋(dang)對應(ying)的(de)(de)(de)(de)(de)測(ce)試電(dian)(dian)(dian)流。低阻(zu)測(ce)量(liang)的(de)(de)(de)(de)(de)4個量(liang)程(cheng)(cheng)，每個量(liang)程(cheng)(cheng)使用(yong)的(de)(de)(de)(de)(de)測(ce)量(liang)電(dian)(dian)(dian)流都不同。與高(gao)一(yi)擋(dang)位(wei)相比，是10倍(bei)的(de)(de)(de)(de)(de)關系。以(yi)MF-500型萬用(yong)表(biao)(biao)為(wei)(wei)例(li)因其低阻(zu)測(ce)量(liang)的(de)(de)(de)(de)(de)4個量(liang)程(cheng)(cheng)內(nei)電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓(ya)為(wei)(wei)15V電(dian)(dian)(dian)阻(zu)刻(ke)(ke)度(du)(du)的(de)(de)(de)(de)(de)中心值為(wei)(wei)10。可求得Rx1擋(dang)的(de)(de)(de)(de)(de)滿(man)(man)度(du)(du)電(dian)(dian)(dian)流為(wei)(wei)150mA；RX10擋(dang)的(de)(de)(de)(de)(de)滿(man)(man)度(du)(du)電(dian)(dian)(dian)流為(wei)(wei)15mA；Rx100擋(dang)的(de)(de)(de)(de)(de)滿(man)(man)度(du)(du)電(dian)(dian)(dian)流為(wei)(wei)1.5mA；RxK擋(dang)的(de)(de)(de)(de)(de)滿(man)(man)度(du)(du)電(dian)(dian)(dian)流為(wei)(wei)150uA；Rx10K檔，內(nei)電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓(ya)為(wei)(wei)9+1.5=10.5V，此(ci)時(shi)滿(man)(man)度(du)(du)電(dian)(dian)(dian)流為(wei)(wei)105uA。明(ming)白各(ge)(ge)擋(dang)使用(yong)的(de)(de)(de)(de)(de)內(nei)電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓(ya)以(yi)及各(ge)(ge)擋(dang)對應(ying)的(de)(de)(de)(de)(de)滿(man)(man)度(du)(du)電(dian)(dian)(dian)流對測(ce)量(liang)電(dian)(dian)(dian)子元件非(fei)常重要。

如(ru)測(ce)(ce)量(liang)電(dian)(dian)(dian)(dian)容器(qi)的(de)(de)充放電(dian)(dian)(dian)(dian)特性時，對大(da)容量(liang)的(de)(de)電(dian)(dian)(dian)(dian)容要使(shi)用(yong)(yong)(yong)(yong)低(di)阻量(liang)程(cheng)(cheng)；對小電(dian)(dian)(dian)(dian)容要使(shi)用(yong)(yong)(yong)(yong)Rx10K量(liang)程(cheng)(cheng)。測(ce)(ce)量(liang)可控硅(gui)的(de)(de)維持(chi)電(dian)(dian)(dian)(dian)流時要使(shi)用(yong)(yong)(yong)(yong)低(di)量(liang)程(cheng)(cheng)，為其(qi)(qi)提供(gong)最大(da)的(de)(de)測(ce)(ce)試電(dian)(dian)(dian)(dian)流。測(ce)(ce)試絕(jue)緣柵型的(de)(de)場效應管(guan)(guan)GBT管(guan)(guan)或高壓硅(gui)堆時，要使(shi)用(yong)(yong)(yong)(yong)Rx10K量(liang)程(cheng)(cheng)，才能(neng)為其(qi)(qi)柵極(ji)提供(gong)5V以(yi)上的(de)(de)門(men)坎電(dian)(dian)(dian)(dian)壓。測(ce)(ce)量(liang)發光二(er)極(ji)管(guan)(guan)或光電(dian)(dian)(dian)(dian)耦(ou)合器(qi)的(de)(de)二(er)極(ji)管(guan)(guan)時，如(ru)果(guo)使(shi)用(yong)(yong)(yong)(yong)內電(dian)(dian)(dian)(dian)池(chi)為1.5V的(de)(de)萬用(yong)(yong)(yong)(yong)表(biao)(biao)可能(neng)正向不(bu)通。即使(shi)使(shi)用(yong)(yong)(yong)(yong)Rx10K量(liang)程(cheng)(cheng)也因提供(gong)的(de)(de)測(ce)(ce)試電(dian)(dian)(dian)(dian)流太小而不(bu)能(neng)發光。較合適(shi)的(de)(de)方法是使(shi)用(yong)(yong)(yong)(yong)內電(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)壓為3V的(de)(de)萬用(yong)(yong)(yong)(yong)表(biao)(biao)進行(xing)直觀的(de)(de)測(ce)(ce)試。在(zai)(zai)線(xian)測(ce)(ce)試晶體管(guan)(guan)的(de)(de)PN結(jie)時如(ru)果(guo)使(shi)用(yong)(yong)(yong)(yong)RxK量(liang)程(cheng)(cheng)正/反向特性不(bu)明(ming)顯容易(yi)誤判。使(shi)用(yong)(yong)(yong)(yong)Rx10量(liang)程(cheng)(cheng)將(jiang)大(da)大(da)改善。總(zong)之電(dian)(dian)(dian)(dian)阻量(liang)程(cheng)(cheng)的(de)(de)潛力巨大(da)已經有人開拓出hFE測(ce)(ce)量(liang)、電(dian)(dian)(dian)(dian)容量(liang)測(ce)(ce)量(liang)、同名端測(ce)(ce)量(liang)、各種IC的(de)(de)測(ce)(ce)量(liang)等功能(neng)。利用(yong)(yong)(yong)(yong)上述經驗提高檢測(ce)(ce)能(neng)力，才能(neng)在(zai)(zai)浩如(ru)煙海(hai)的(de)(de)機器(qi)里(li)，查出損壞的(de)(de)元件。